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| Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features * * * Package Dimensions unit : mm 2041A [2SB1133 / 2SD1666] 10.0 3.2 3.5 7.2 Wide ASO(Adoption of MBIT process). Micaless package facilitating easy mounting. High reliability. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 ( ) : 2SB1133 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C Conditions 2.55 2.55 2.4 Specifications 2.55 123 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Ratings (-)60 (-)60 (-)6 (-)3 (-)8 2 25 150 -40 to +150 Unit V V V A A W W C C Electrical Characteristics a t Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE(1) hFE(2) Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)0.5A VCE=(--)5V, IC=(--)3A min Ratings typ max (-)100 (-)100 *280 Unit A A *70 20 Continued on next page. * : The 2SB1133 / 2SD1666 are classified by 0.5A hFE as follows : Rank Q R S hFE 70 to 140 100 to 200 140 to 280 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72501 GI IM No.3031-1/4 2SB1133 / 2SD1666 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol fT Cob VCE(sat) VBE V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCE=(--)5V, IC=(-)0.5A VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)0.2A VCE=(--)5V, IC=(-)0.5A IC=(--)1mA, IE=0 IC=(--)5mA, RBE= IE=(-)1mA, IC=0 min Ratings typ (40)8 (110)60 (--)0.6 (--)0.7 max Unit MHz pF V V V V V (--)1 (--)1 (--)60 (--)60 (--)6 --50 --4 mA 5m A --3.0 IC -- VCE --40m A --35mA --30mA --25mA 3.0 IC -- VCE 50m A 45m A 40mA --2.5 2.5 35mA 30mA Collector Current, IC -- A --2.0 --20mA --15mA Collector Current, IC -- A 25mA 2.0 20mA 15mA --1.5 1.5 --10mA --1.0 10mA 1.0 --5mA --0.5 5mA 0.5 0 0 --1 --2 --3 IB=0 --4 --5 --6 IT03736 0 0 1.0 2.0 3.0 4.0 IB=0 5.0 6.0 IT03737 Collector to Emitter Voltage, VCE -- V --3.6 --3.2 IC -- VBE(on) Collector to Emitter Voltage, VCE -- V 3.6 IC -- VBE(on) 2SB1133 VCE= --5V Collector Current, IC -- A 3.2 2.8 2.6 2.0 1.6 2SD1666 VCE=5V Collector Current, IC -- A --2.8 --2.6 --2.0 --1.6 Ta=1 20C 0C 25C 25C --40C Ta=1 2 --1.2 --0.8 --0.4 0 0 --0.2 --0.4 1.2 0.8 0.4 0 --0.6 --0.8 --1.0 --1.2 --1.4 IT03738 5 0 0.2 0.4 0.6 0.8 --40C 1.0 1.2 1.4 IT03739 Base to Emitter On Voltage, VBE(on) -- V 5 hFE -- IC Base to Emitter On Voltage, VBE(on) -- V hFE -- IC Ta=120C 3 2SB1133 VCE= --5V 3 2SD1666 VCE=5V Ta=120C DC Current Gain, hFE 2 25C DC Current Gain, hFE 2 25C --40C 100 7 5 100 --40C 5 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 3 5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 Collector Current, IC -- A IT03740 Collector Current, IC -- A IT03741 No.3031-2/4 2SB1133 / 2SD1666 2 VCE(sat) -- IC 2SB1133 IC/IB=10 Collector to Emitter Saturation Voltage, VCE(sat) -- V 2 VCE(sat) -- IC 2SD1666 IC/IB=10 --1.0 1.0 Collector to Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 5 3 2 --0.1 0.1 5 3 2 7 --0.01 2 1 Ta= 2 0C 0C 7 --0.1 2 3 5 7 --1.0 2 3 5 5 3 2 5 0.01 2 --4 C 25 3 5 C 120 Ta= C --40 25C 3 5 0.1 2 3 5 1.0 2 3 5 Collector Current, IC -- A 2 IT03742 2 VBE(sat) -- IC Collector Current, IC -- A IT03743 VBE(sat) -- IC 2SB1133 IC/IB=10 Base to Emitter Saturation Voltage, VBE(sat) -- V Base to Emitter Saturation Voltage, VBE(sat) -- V 2SD1666 IC/IB=10 1.0 --1.0 Ta= --40C 7 7 Ta= --40C 25C 120 C 25C 120 C 5 5 3 3 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 2 5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 Collector Current, IC -- A 100 IT03744 3 fT -- IC Collector Current, IC -- A IT03745 fT -- IC Gain-Bandwidth Product, f T -- MHz 7 Gain-Bandwidth Product, f T -- MHz 2SB1133 VCE= --5V 2 2SD1666 VCE=5V 5 10 7 5 3 2 3 2 10 5 --0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 Collector Current, IC -- A 10 7 5 --10 IT03746 28 5 5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 ASO 0m Collector Current, IC -- A IT03747 PC -- Tc ICP IC max 100s> 50 s 2SB1133/2SD1666 Collector Dissipation, PC -- W 25 24 10 10 m 0 1m Collector Current, IC -- A s s s 3 2 DC 20 Op era tio 1.0 7 5 3 2 0.1 2 n 16 P C =2 5W 12 8 4 2SB1133/2SD1666 (For PNP minus sign is omitted) 3 5 7 --10 2 3 5 0 --100 IT03748 7 0 20 40 60 80 100 120 140 160 Collector to Emitter Voltage, VCE -- V Case Temperature, Tc -- C IT03749 No.3031-3/4 2SB1133 / 2SD1666 4 PC -- Ta 2SB1133/2SD1666 Collector Dissipation, PC -- W 3 2 No 1 hea t si nk 0 0 20 40 60 80 100 120 140 160 Amibient Tamperature, Ta -- C IT03765 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. PS No.3031-4/4 |
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